SiC SINGLE CRYSTAL SUBSTRATE

摘要

Provided is a SiC single crystal substrate which can form excellent epitaxial growth films and with which a high-quality epitaxial substrate can be obtained. This SiC single crystal substrate has a surface polished by CMP processing, and is characterized in that, when observing with a transmission electron microscope a cross-section of the SiC single crystal substrate with 00L reflection or h-h0 reflection, and L and h natural numbers, no more than five lattice defects are observed within a length of 10mum in a direction parallel to the polished surface, said lattice defects occurring within 100nm in the vertical direction from the polished surface and of a size such that the width in a direction parallel to the polished surface is 30nm or greater and the length in the direction vertical to the polished surface is 50nm or greater.