FET e.g. planar FET, for use in memory cell of microprocessor, has crystalline silicon substrate comprising surface, and source or drain regions formed on surface, which surrounds channel portion along length of channel portion

摘要

The FET (200) has a crystalline silicon substrate (20) i.e. wafer, comprising a surface and made of diamond or germanium. A channel portion is formed over the surface. The channel portion comprises another surface with certain height over the former surface and certain length parallel to the former surface. Two source or drain regions are formed on the former surface, which surrounds the channel portion along the length of the channel portion. The substrate comprises fin- and/or ridge structures (202a, 202b) in two regions (20a, 20b). An independent claim is also included for a method for manufacturing a FET.