| 摘要 |
PROBLEM TO BE SOLVED: To provide a C-V characteristics measurement system and a C-V characteristics measurement method capable of suppressing the secular change of resistivity more than conventional, when measuring a silicon single crystal wafer repeatedly by using a mercury electrode.SOLUTION: Measurement is performed using a C-V characteristics measurement system including a mercury probe 30 which brings mercury, as an electrode, into contact with a silicon single crystal wafer, an LCR meter 40 for forming a depletion layer by supplying high frequency via the mercury probe 30 and applying a reverse bias voltage to the silicon single crystal wafer, and for measuring the capacity of the depletion layer, an analytic software for calculating the C-V characteristics from the reverse bias voltage and the capacity of the depletion layer, and a static eraser 20 for removing static electricity of the silicon single crystal wafer. |
