| 发明名称 |
Metal-Oxide-Semiconductor High Electron Mobility Transistors and Methods of Fabrication |
| 摘要 |
A method of fabricating Group III-V semiconductor metal oxide semiconductor (MOS) and III-V MOS devices are described.
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| 申请公布号 |
US2013288461(A1) |
申请公布日期 |
2013.10.31 |
| 申请号 |
US201313930332 |
申请日期 |
2013.06.28 |
| 申请人 |
AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD |
发明人 |
DUNGAN THOMAS EDWARD;NIKKEL PHILIP GENE |
| 分类号 |
H01L21/02 |
主分类号 |
H01L21/02 |
| 代理机构 |
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