PATTERN CORRECTION METHOD, STORAGE MEDIUM, INFORMATION PROCESSING APPARATUS, METHOD OF MANUFACTURING MASK, EXPOSURE APPARATUS, AND METHOD OF MANUFACTURING DEVICE

摘要

The present invention provides a pattern correction method of, when a plurality of pattern elements on a mask used to process a line pattern formed on a substrate are transferred to the substrate, performing proximity effect correction of each pattern element such that a transferred image obtains a dimension equal to a target dimension, comprising setting, based on a density of a pattern element in a peripheral region surrounding a pattern element of interest, a dimension of the pattern element whose transferred image formed under the density of the pattern element has a dimension equal to the target dimension as a reference value for the pattern element of interest, and calculating a dimension of transferred image of the pattern element of interest while changing around the reference value and determining the dimension of the pattern element of interest based on the calculation result.