发明名称 |
METAL-INSULATOR-METAL (MIM) CAPACITOR WITH DEEP TRENCH (DT) STRUCTURE AND METHOD IN A SILICON-ON-INSULATOR (SOI) |
摘要 |
A structure forming a metal-insulator-metal (MIM) trench capacitor is disclosed. The structure comprises a multi-layer substrate having a metal layer and at least one dielectric layer. A trench is etched into the substrate, passing through the metal layer. The trench is lined with a metal material that is in contact with the metal layer, which comprises a first node of a capacitor. A dielectric material lines the metal material in the trench. The trench is filled with a conductor. The dielectric material that lines the metal material separates the conductor from the metal layer and the metal material lining the trench. The conductor comprises a second node of the capacitor. |
申请公布号 |
US2013285193(A1) |
申请公布日期 |
2013.10.31 |
申请号 |
US201213457601 |
申请日期 |
2012.04.27 |
申请人 |
BARTH, JR. JOHN E.;HO HERBERT L.;KHAN BABAR A.;PETERSON KIRK D.;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BARTH, JR. JOHN E.;HO HERBERT L.;KHAN BABAR A.;PETERSON KIRK D. |
分类号 |
H01L29/02;H01L21/02 |
主分类号 |
H01L29/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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