发明名称 |
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF |
摘要 |
Provided are a semiconductor device which enables reduction of diffusion of Si in the manufacturing process of an MIPS element and suppression of an increase in EOT, and a method of manufacturing the same. An embodiment of the present invention is a semiconductor device including a field effect transistor having a gate insulating film provided on a silicon substrate and a gate electrode provided on the gate insulating film. The gate electrode is a stack-type electrode including a conductive layer containing at least Ti, N, and O (oxygen) and a silicon layer provided on the conductive layer, and the concentration of oxygen in the conductive layer is highest in the side of the silicon layer. |
申请公布号 |
US2013285158(A1) |
申请公布日期 |
2013.10.31 |
申请号 |
US201213558746 |
申请日期 |
2012.07.26 |
申请人 |
KITANO NAOMU;MINAMI TAKASHI;YAMAGUCHI NOBUO;SEINO TAKUYA;NAKAGAWA TAKASHI;WATANABE HEIJI;SHIMURA TAKAYOSHI;HOSOI TAKUJI;CANON ANELVA CORPORATION |
发明人 |
KITANO NAOMU;MINAMI TAKASHI;YAMAGUCHI NOBUO;SEINO TAKUYA;NAKAGAWA TAKASHI;WATANABE HEIJI;SHIMURA TAKAYOSHI;HOSOI TAKUJI |
分类号 |
H01L29/49;H01L21/285 |
主分类号 |
H01L29/49 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|