发明名称 |
Method of Fabricating Tunnel Transistors With Abrupt Junctions |
摘要 |
A method of manufacturing a tunnel field effect transistor (TFET) includes forming on a substrate covered by an epitaxially grown source material a dummy gate stack surrounded by sidewall spacers; forming doped source and drain regions followed by forming an inter-layer dielectric surrounding the sidewall spacers; removing the dummy gate stack, etching a self-aligned cavity; epitaxially growing a thin channel region within the self-aligned etch cavity; conformally depositing gate dielectric and metal gate materials within the self-aligned etch cavity; and planarizing the top surface of the replacement metal gate stack to remove the residues of the gate dielectric and metal gate materials. |
申请公布号 |
US2013285138(A1) |
申请公布日期 |
2013.10.31 |
申请号 |
US201213459278 |
申请日期 |
2012.04.30 |
申请人 |
VEGA REINALDO A.;ALPTEKIN EMRE;TRAN HUNG H.;YUAN XIAOBIN;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
VEGA REINALDO A.;ALPTEKIN EMRE;TRAN HUNG H.;YUAN XIAOBIN |
分类号 |
H01L29/78;H01L21/336 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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