发明名称 METHOD FOR MANUFACTURING CRYSTAL SUBSTRATE HAVING UNEVEN STRUCTURE
摘要 <p>An object of the present invention is to provide a method for manufacturing a crystal substrate having an uneven structure that requires a simple manufacturing process and enables the refining of pattern processing on a surface of the crystal substrate and an increase in the diameter of the crystal substrate, which comprises steps (A) to (C): (A) a step of forming a transfer film in which an uneven film is formed on a surface of a support film that has an uneven shape whose recess width (w) is between 0.05 mum and 100 mum, recess depth (d) is between 0.05 mum and 10 mum, and ratio (d/w) of the recess depth (d) to the recess width (w) is equal to or less than 1.5, the uneven film being formed on the surface in such a manner that the residual film thickness (h) is between 0.01 mum and 1 mum; (B) a transferring step in which the uneven film is transferred onto the crystal substrate after laminating the transfer film onto the crystal substrate so as to form an uneven film-coated crystal substrate; and (C) an etching step in which the uneven film-coated crystal substrate is etched so as to form the uneven structure on the surface of the crystal substrate.</p>
申请公布号 WO2013161095(A1) 申请公布日期 2013.10.31
申请号 WO2012JP70362 申请日期 2012.08.09
申请人 TORAY INDUSTRIES, INC.;TAKADA, SUSUMU;KURASEKO, EMI;SUZUKI, MOTOYUKI 发明人 TAKADA, SUSUMU;KURASEKO, EMI;SUZUKI, MOTOYUKI
分类号 H01L21/3065;H01L21/306;H01L33/22 主分类号 H01L21/3065
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