发明名称 |
SOI DEVICE WITH DTI AND STI |
摘要 |
A method of forming an SOI structure which includes providing a semiconductor on insulator (SOI) substrate having an SOI layer, an intermediate buried oxide (BOX) layer and a bottom substrate; patterning the SOI layer to form first and second openings in the SOI layer; extending the first openings into the bottom substrate; enlarging the first openings within the bottom substrate; filling the first and second openings with an insulator material to form deep trench isolations (DTIs) from the first openings and shallow trench isolations (STIs) from the second openings; implanting in the bottom substrate between the DTIs to form wells; and forming semiconductor devices in the SOI layer between the DTIs with each semiconductor device being separated from an adjacent semiconductor device by an STI.
|
申请公布号 |
US2013288451(A1) |
申请公布日期 |
2013.10.31 |
申请号 |
US201313924851 |
申请日期 |
2013.06.24 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHENG KANGGUO;DORIS BRUCE B.;KHAKIFIROOZ ALI;KERBER PRANITA |
分类号 |
H01L21/762 |
主分类号 |
H01L21/762 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|