发明名称 System, useful for plasma processing planar substrate, includes modules for processing substrate and plasma source, substrate transportation system, and gas supply and extraction device separated from each other and connected with modules
摘要 <p>The continuous plasma processing system comprises process modules for plasma processing a planar substrate, a linear plasma source, a substrate transportation system, a gas supply device, and gas extraction device. The plasma source, substrate transportation system and gas supply and gas extraction devices are separated from each other, and operably connected with process modules and with one another. The process module comprises a transport chamber with the substrate transport system, a plasma chamber (3) with the plasma source coupled the transport chamber, and a pump chamber (2). The continuous plasma processing system comprises process modules for plasma processing a planar substrate, a linear plasma source, a substrate transportation system, a gas supply device, and gas extraction device. The plasma source, substrate transportation system and gas supply and gas extraction devices are separated from each other, and operably connected with process modules and with one another. The process module comprises a transport chamber with the substrate transport system, a plasma chamber (3) with the plasma source coupled the transport chamber, and a pump chamber (2) coupled to the gas extraction device and connected to the plasma chamber. The chambers are stacked and laminated and spatially separated from each other, and are operably connected on another. A partition wall (18) is provided between plasma chamber and pump chamber and provided in the plasma source. The pump chamber comprises a buffer volume pump, which extends over a suction pump, is connected with the gas extraction device via a pump grid, and is divided into two parts in its direction of extension on the suction pump. The parts are separated from each other. Each of the pump chamber parts is connected with the gas retraction device via the pump grid. The pump chamber comprises a flow directing assembly (10) for sucked off gas. The flow directing assembly comprises vertical conductance diaphragms aligned in pump chamber, and gas passage openings between plasma and pump chambers. The substrate transportation system comprises substrate supports (5) and plant walls or cover sheets. The gas extraction device is provided to cover or at the bottom at the process modules. The gas supply device comprises a process gas supply channel connected with plasma chamber, and a check gas supply channel connected with transport camber. A tunnel is coupled with gas suction device, and/or is connected with the check gas supply channel of the gas supply device.</p>
申请公布号 DE102012103710(A1) 申请公布日期 2013.10.31
申请号 DE201210103710 申请日期 2012.04.27
申请人 ROTH & RAU AG 发明人 MAI, JOACHIM;UHLIG, MATTHIAS;SCHLEMM, HERMANN
分类号 C23C16/54;C23C14/56;C23C16/455 主分类号 C23C16/54
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