发明名称 METHOD FOR OPTICAL PROXIMITY CORRECTION OF A RETICLE TO BE MANUFACTURED USING SHAPED BEAM LITHOGRAPHY
摘要 In the field of semiconductor production using shaped charged particle beam lithography, a method and system for fracturing or mask data preparation or proximity effect correction is disclosed, wherein a series of curvilinear character projection shots are determined for a charged particle beam writer system, such that the set of shots can form a continuous track, possibly of varying width, on a surface. A method for forming a continuous track on a surface using a series of curvilinear character projection shots is also disclosed. Methods for manufacturing a reticle and for manufacturing a substrate such as a silicon wafer by forming a continuous track on a surface using a series of curvilinear character projection shots is also disclosed.
申请公布号 US2013290913(A1) 申请公布日期 2013.10.31
申请号 US201313923368 申请日期 2013.06.21
申请人 D2S, INC. 发明人 FUJIMURA AKIRA
分类号 G03F1/36 主分类号 G03F1/36
代理机构 代理人
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