发明名称 |
SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD |
摘要 |
The present disclosure provides a substrate processing method and a substrate processing apparatus. The substrate processing method includes: generating an SPM liquid of a first temperature that contains Caro's acid having a separation effect of a resist film formed on the surface of a substrate by mixing heated sulfuric acid with hydrogen peroxide; cooling the SPM liquid to a second temperature at which a reduction effect of film loss occurs; and applying the SPM liquid of the second temperature to the resist film thereby separating the resist film.
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申请公布号 |
US2013284213(A1) |
申请公布日期 |
2013.10.31 |
申请号 |
US201313858248 |
申请日期 |
2013.04.08 |
申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
HACHIYA YOSUKE;ITO NORIHIRO;KAWANO HISASHI;NONAKA JUN;NOGAMI JUN |
分类号 |
H01L21/02 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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