发明名称 SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD
摘要 The present disclosure provides a substrate processing method and a substrate processing apparatus. The substrate processing method includes: generating an SPM liquid of a first temperature that contains Caro's acid having a separation effect of a resist film formed on the surface of a substrate by mixing heated sulfuric acid with hydrogen peroxide; cooling the SPM liquid to a second temperature at which a reduction effect of film loss occurs; and applying the SPM liquid of the second temperature to the resist film thereby separating the resist film.
申请公布号 US2013284213(A1) 申请公布日期 2013.10.31
申请号 US201313858248 申请日期 2013.04.08
申请人 TOKYO ELECTRON LIMITED 发明人 HACHIYA YOSUKE;ITO NORIHIRO;KAWANO HISASHI;NONAKA JUN;NOGAMI JUN
分类号 H01L21/02 主分类号 H01L21/02
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