发明名称 |
CHARGED PARTICLE LITHOGRAPHY SYSTEM WITH ALIGNMENT SENSOR AND BEAM MEASUREMENT SENSOR |
摘要 |
A multi-beamlet charged particle beamlet lithography system for transferring a pattern to a surface of a substrate. The system comprises a projection system (311) for projecting a plurality of charged particle beamlets (7) onto the surface of the substrate; a chuck (313) moveable with respect to the projection system; a beamlet measurement sensor (i.a. 505, 511) for determining one or more characteristics of one or more of the charged particle beamlets, the beamlet measurement sensor having a surface (501) for receiving one or more of the charged particle beamlets; and a position mark measurement system for measuring a position of a position mark (610, 620, 635), the position mark measurement system comprising an alignment sensor (361, 362). The chuck comprises a substrate support portion for supporting the substrate, a beamlet measurement sensor portion (460) for accommodating the surface of the beamlet measurement sensor, and a position mark portion (470) for accommodating the position mark. |
申请公布号 |
WO2013132064(A3) |
申请公布日期 |
2013.10.31 |
申请号 |
WO2013EP54723 |
申请日期 |
2013.03.08 |
申请人 |
MAPPER LITHOGRAPHY IP B.V. |
发明人 |
SCHEFFERS, PAUL IJMERT;MEIJER, JAN ANDRIES;SLOT, ERWIN;KUIPER, VINCENT SYLVESTER;VERGEER, NIELS |
分类号 |
H01J37/304;H01J37/317 |
主分类号 |
H01J37/304 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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