| 摘要 |
<p>The invention relates to an organic field effect transistor, comprising a first electrode (1) and a second electrode (2), the electrodes providing a source electrode and a drain electrode, an intrinsic organic semiconducting layer (3) in electrical contact with the first and second electrode (1, 2), a gate electrode (6), a gate insulator (5) provided between the gate electrode (6) and the intrinsic organic semiconducting layer (3), and a doped organic semiconducting layer (4) provided between the gate insulator (5) and the intrinsic organic semiconducting layer (3), wherein a charge carrier channel between the first and second electrode (1, 2) is formed in the doped organic semiconducting layer (4).</p> |
