摘要 |
<p>A method and apparatus for forming a thin film of a copper indium gallium selenide (CIGS)-type material are disclosed. The method includes providing first and second targets in a common sputtering chamber. The first target includes a source of CIGS material, such as an approximately stoichiometric polycrystalline CIGS material, and the second target includes a chalcogen, such as selenium, sulfur, tellurium, or a combination of these elements. The second target provides an excess of chalcogen in the chamber. This can compensate, at least in part, for the loss of chalcogen from the CIGS-source in the first target, resulting in a thin film with a controlled stoichiometry which provides effective light absorption when used in a solar cell.</p> |
申请人 |
THE GOVERNMENT OF THE UNITED STATES OF AMERICA ASREPRESENTED BY THE SECRETARY OF THE NAVY;SUNLIGHT PHOTONICS INC. |
发明人 |
NGUYEN, VINH, Q;FRANTZ, JESSE, A.;SANGHERA, JASBINDER, S.;AGGARWAL, ISHWAR, D.;BRUCE, ALLAN, J.;CYRUS, MICHAEL;FROLOV, SERGEY, V. |