SEMICONDUCTOR DEVICE MANUFACTURING METHOD, SUBSTRATE PROCESSING METHOD, SUBSTRATE PROCESSING DEVICE AND RECORDING MEDIUM

摘要

PURPOSE: A method for manufacturing a semiconductor device, a substrate processing method, a substrate processing device, and a recording medium are provided to improve resistance to etching by using a carbon layer. CONSTITUTION: A heating device comprises a heater (207). The heater is vertical to a heater base. A reaction tube (203) is arranged in the heater. Nozzles are arranged in a process chamber (201). An organic gas is supplied into the process chamber.