发明名称 COMPOSITIONS AND METHODS FOR SELECTIVE POLISHING OF SILICON NITRIDE MATERIALS
摘要 <p>The present invention provides an acidic aqueous polishing composition suitable for polishing a silicon nitride-containing substrate in a chemical-mechanical polishing (CMP) process. The composition, at point of use, comprises 0.01 to 2 percent by weight of a particulate calcined ceria abrasive, 10 to 1000 ppm of at least one cationic polymer, optionally, 10 to 2000 ppm of a polyoxyalkylene polymer; and an aqueous carrier therefor. The at least one cationic polymer is selected from a poly(vinylpyridine) polymer and a combination of a poly(vinylpyridine) polymer and a quaternary ammonium-substituted polymer. Methods of polishing substrates and of selectively removing silicon nitride from a substrate in preference to removal of polysilicon using the compositions are also provided.</p>
申请公布号 SG193528(A1) 申请公布日期 2013.10.30
申请号 SG20130070305 申请日期 2012.04.13
申请人 CABOT MICROELECTRONICS CORPORATION 发明人 WARD, WILLIAM
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