| 摘要 |
Disclosed are a light emitting device and a light emitting device package. The light emitting device includes a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, a second conductive semiconductor layer on the active layer, a third semiconductor layer between the active layer and the second conductive semiconductor layer, and a light extraction structure on the second conductive semiconductor layer. A top surface of the third semiconductor layer has a Ga-face. |
