| 摘要 |
PURPOSE: An organic semiconductor material with n-type electrical property, a transistor device using the same, and a method for manufacturing the transistor device are provided to ensure stabilized energy level which is beneficial for electron injection and various molecular interaction. CONSTITUTION: A transistor device using an organic semiconductor material with n-type electrical property comprises a gate electrode(160), a source, a drain electrode(130,140), and an organic thin film layer(120). The gate electrode is formed on a substrate. The organic thin film layer connects the source to the drain electrode and contains the organic semiconductor material. |
