发明名称 |
SEMICONDUCTOR DEVICE AND DISPLAY DEVICE |
摘要 |
<p>A semiconductor device (100) according to the present invention is a semiconductor device with a thin-film transistor (10), and includes: a gate electrode (62) which has been formed on a substrate (60) as a part of the thin-film transistor (10); a gate insulating layer (66) which has been formed on the gate electrode (62); an oxide semiconductor layer (68) which has been formed on the gate insulating layer (66); a source electrode (70s) and a drain electrode (70d) which have been formed on the oxide semiconductor layer (68); a protective layer (72) which has been formed on the oxide semiconductor layer (68), the source electrode (70s) and the drain electrode (70d); an oxygen supplying layer (74) which has been formed on the protective layer (72); and an anti-diffusion layer (78) which has been formed on the oxygen supplying layer (74).</p> |
申请公布号 |
EP2657974(A1) |
申请公布日期 |
2013.10.30 |
申请号 |
EP20110851182 |
申请日期 |
2011.12.15 |
申请人 |
SHARP KABUSHIKI KAISHA |
发明人 |
MORIGUCHI MASAO;KANZAKI YOHSUKE;TAKANISHI YUDAI;KUSUMI TAKATSUGU;MATSUKIZONO HIROSHI |
分类号 |
H01L29/786;G02F1/1368;G09F9/30;H01L21/336;H01L27/12;H01L29/66;H01L51/50 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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