发明名称 SEMICONDUCTOR PROCESSING SYSTEM HAVING MULTIPLE DECOUPLED PLASMA SOURCES
摘要 <p>A semiconductor substrate processing system includes a substrate support defined to support a substrate in exposure to a processing region. The system also includes a first plasma chamber defined to generate a first plasma and supply reactive constituents of the first plasma to the processing region. The system also includes a second plasma chamber defined to generate a second plasma and supply reactive constituents of the second plasma to the processing region. The first and second plasma chambers are defined to be independently controlled.</p>
申请公布号 SG193614(A1) 申请公布日期 2013.10.30
申请号 SG20130071824 申请日期 2012.05.07
申请人 LAM RESEARCH CORPORATION 发明人 HOLLAND, JOHN, PATRICK;VENTZEK, PETER, L.G.;SINGH, HARMEET;GOTTSCHO, RICHARD
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