Electronic device with a metallisation layer having a high- and a low-melting-point component diffusion-bonded together and a synthetic resin layer covering the metallisation layer

摘要

An electronic device includes a substrate (11, 14B) and an electronic component (141-146, 14A, 14C, 140). The substrate (11, 14B) has a metallization trace (12, 12n, 12p). The metallization trace (12, 12n, 12p) has a metallization layer (121, 121n, 121p) and a synthetic resin layer (122, 122n, 122p). The metallization layer (121, 121n, 121p) has a high-melting-point metallic component (124) and a low-melting-point metallic component (123). The high-melting-point metallic component (124) and the low-melting-point metallic component (123) are diffusion bonded together and adhered to a surface of the substrate (11, 14B). The synthetic resin layer (122, 122n, 122p) is formed simultaneously with the metallization layer (121, 121n, 121p) to cover a surface of the metallization layer (121, 121n, 121p) with a thickness in the range of 5 nm to 1000 nm, preferably 5 nm to 500 nm. The electronic component (141-146, 14A, 14C, 140) is electrically connected to the metallization layer (121, 121n, 121p). The high-melting-point metallic particles (124) and the low-melting-point metallic particles (123) may have a nanocomposite structure.