发明名称 |
SEMICONDUCTOR DEVICE |
摘要 |
A data retention period in a semiconductor device or a semiconductor memory device is lengthened. The semiconductor device or the semiconductor memory includes a memory circuit including a first transistor including a first semiconductor layer and a first gate and a second transistor including a second semiconductor layer, a second gate, and a third gate The first semiconductor layer is formed at the same time as a layer including the second gate. |
申请公布号 |
KR20130118893(A) |
申请公布日期 |
2013.10.30 |
申请号 |
KR20137014047 |
申请日期 |
2011.10.07 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
KATO KIYOSHI;SHIONOIRI YUTAKA;NAGATSUKA SHUHEI;YAKUBO YUTO;KOYAMA JUN |
分类号 |
H01L21/8242;G11C11/405;H01L27/108 |
主分类号 |
H01L21/8242 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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