发明名称 SIGNAL PROCESSING CIRCUIT AND METHOD FOR DRIVING THE SAME
摘要 <p>It is an object to provide a memory device for which a complex manufacturing process is not necessary and whose power consumption can be suppressed and a signal processing circuit including the memory device. In a memory element including a phase-inversion element by which the phase of an input signal is inverted and the signal is output such as an inverter or a clocked inverter, a capacitor which holds data and a switching element which controls storing and releasing of electric charge in the capacitor are provided. For the switching element, a transistor including an oxide semiconductor in a channel formation region is used. The memory element is applied to a memory device such as a register or a cache memory included in a signal processing circuit.</p>
申请公布号 EP2526619(A4) 申请公布日期 2013.10.30
申请号 EP20100844011 申请日期 2010.12.27
申请人 SEMICONDUCTOR ENERGY LABORATORY CO. LTD. 发明人 KOYAMA, JUN;YAMAZAKI, SHUNPEI
分类号 H03K3/356;G11C11/412;G11C27/02;H01L21/84;H01L27/108;H01L27/12;H03K3/037 主分类号 H03K3/356
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