发明名称
摘要 <P>PROBLEM TO BE SOLVED: To improve contrast of a photodetector to obtain an increased optical current. <P>SOLUTION: The photodetector includes a substrate, and a diode containing a first semiconductor region of first conductive type, a second semiconductor region of second conductive type, and a third semiconductor region which is provided between the first semiconductor region and the second semiconductor region and has an impurity concentration lower than the first semiconductor region and the second semiconductor region, wherein each region is provided together on the main surface of the substrate. It also includes an insulating film which covers the first semiconductor region, the second semiconductor region, and the third semiconductor region, a first light shielding electrode which is provided on the insulating film and electrically connected to the first semiconductor region, and a second light shielding electrode which is provided on the insulating film and electrically connected to the second semiconductor region. The first light shielding electrode has a first region which faces the third semiconductor region across the insulating film. The second light shielding electrode has a second region which faces the third semiconductor across the insulating film. <P>COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP5330877(B2) 申请公布日期 2013.10.30
申请号 JP20090075795 申请日期 2009.03.26
申请人 发明人
分类号 H01L31/10 主分类号 H01L31/10
代理机构 代理人
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