发明名称 VAPORIZATION SOURCE, VAPORIZATION CHAMBER, COATING METHOD AND NOZZLE PLATE
摘要 The invention relates to vaporization source, an evaporation chamber, a coating method and a nozzle plate. The vaporization source according to the invention makes it possible to generate a high, stable melt flow rate having improved layer thickness homogeneity under vacuum conditions in a selenium atmosphere. The direction of the molecular flow of the vaporization source can be adjusted with respect to the substrate support located above the vaporization source.
申请公布号 EP2655686(A1) 申请公布日期 2013.10.30
申请号 EP20110802863 申请日期 2011.12.16
申请人 SOLARION AG PHOTOVOLTAIK 发明人 ULMER, FRANK;GOEBERT, CHRISTOF;ZACHMANN, HENDRIK;ROESSLER, JENS;SCHULER, HEIKO;HUBER, FRANK;LEIFELD, OLIVER
分类号 C23C14/24;C23C14/56 主分类号 C23C14/24
代理机构 代理人
主权项
地址