SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

PURPOSE: A semiconductor device and a method for manufacturing the same are provided to obtain stable electrical properties by using an insulating layer including gallium oxide. CONSTITUTION: A first insulating layer is arranged on a first conductive layer. An oxide semiconductor layer (403) is arranged on the first insulating layer. A source electrode layer (405a) and a drain electrode layer (405b) are electrically connected to an oxide semiconductor layer. A second insulating layer is arranged on the source electrode layer and the drain electrode layer. A second conductive layer is arranged on the second insulating layer.