发明名称 |
INTEGRATED MAGNETORESISTIVE SENSOR, IN PARTICULAR THREE-AXES MAGNETORESISTIVE SENSOR AND MANUFACTURING METHOD THEREOF |
摘要 |
An integrated magnetoresistive device, where a substrate of semiconductor material is covered, on a first surface, by an insulating layer. A magnetoresistor of ferromagnetic material extends in the insulating layer and defines a sensitivity plane of the sensor. A concentrator of ferromagnetic material including at least one arm, extending in a transversal direction to the sensitivity plane and vertically offset to the magnetoresistor. In this way, magnetic flux lines directed perpendicularly to the sensitivity plane are concentrated and deflected so as to generate magnetic-field components directed in a parallel direction to the sensitivity plane. |
申请公布号 |
EP2656090(A1) |
申请公布日期 |
2013.10.30 |
申请号 |
EP20110805049 |
申请日期 |
2011.12.23 |
申请人 |
STMICROELECTRONICS S.R.L. |
发明人 |
PACI, DARIO;MORELLI, MARCO;RIVA, CATERINA |
分类号 |
G01R33/00;G01R33/09 |
主分类号 |
G01R33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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