发明名称 PROCESS FOR CREATING LITHOGRAPHICALLY-DEFINED PLASMONIC STRUCTURES WITH ENHANCED Q FACTORS
摘要 <p>10PROCESS FOR CREATING LITHOGRAPHICALLY-DEFINEDA method for plasmonic structure manufacture and for protecting a plasmonic nanostructure during annealing is provided. The method includes: lithographically forming a plasmonic nanostructure on a substrate; encapsulating the plasmonic nanostructure in high temperature resistant material; annealing the plasmonic nanostmcture; and removing the high temperature resistant material to reveal the annealed plasmonic nanostructure.FIGURE 1</p>
申请公布号 SG193737(A1) 申请公布日期 2013.10.30
申请号 SG20130020110 申请日期 2013.03.19
申请人 AGENCY FOR SCIENCE, TECHNOLOGY AND RESEARCH 发明人 JOEL K.W. YANG;MICHEL BOSMAN;HUIGAO DUAN;KARTHIK KUMAR;IN YEE PHANG
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