发明名称 |
PROCESS FOR CREATING LITHOGRAPHICALLY-DEFINED PLASMONIC STRUCTURES WITH ENHANCED Q FACTORS |
摘要 |
<p>10PROCESS FOR CREATING LITHOGRAPHICALLY-DEFINEDA method for plasmonic structure manufacture and for protecting a plasmonic nanostructure during annealing is provided. The method includes: lithographically forming a plasmonic nanostructure on a substrate; encapsulating the plasmonic nanostructure in high temperature resistant material; annealing the plasmonic nanostmcture; and removing the high temperature resistant material to reveal the annealed plasmonic nanostructure.FIGURE 1</p> |
申请公布号 |
SG193737(A1) |
申请公布日期 |
2013.10.30 |
申请号 |
SG20130020110 |
申请日期 |
2013.03.19 |
申请人 |
AGENCY FOR SCIENCE, TECHNOLOGY AND RESEARCH |
发明人 |
JOEL K.W. YANG;MICHEL BOSMAN;HUIGAO DUAN;KARTHIK KUMAR;IN YEE PHANG |
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