| 摘要 |
<p>Method and Device for Bonding of Two Wafers AbstractThis invention relates to a device for bonding of two wafers (2,3) on one joining surface V of the wafers (2. 3), there being a pressure transfer means with a pressure surface D for applying a bond pressure to the wafers (2, 3) on the pressure surface D, characterized in that the pressure surface D is smaller than the joining surface V.Furthermore this invention relates to a method for bonding of two wafers (2, 3) on one joining surface V of the two wafers (2, 3), by pressure transfer means (I) with a pressure surface D for action on the wafers (2, 3) a bond pressure being applied in succession to partial sections of the joining surface V.Figure lc</p> |
