| 摘要 |
PURPOSE: A method for reproducing a substrate for depositing a III group semiconductor is provided to obtain a reproduced substrate with high quality by using basic materials like NaOH and KOH as etchants to prevent damage to the exposed substrate. CONSTITUTION: A low temperature buffer layer(20) is formed on a substrate(10). A first n type III group nitride semiconductor layer(25) is formed on the low temperature buffer layer. A second n type III group nitride semiconductor layer(30) is formed on the first n type III group nitride semiconductor layer. An active layer(40) is formed on the second n type III group nitride semiconductor layer. A p type III group nitride semiconductor layer(50) is formed on the active layer. |
