发明名称 |
Methods for forming a semiconductor structure |
摘要 |
Methods of forming a Ni material on a bond pad are disclosed. The methods include forming a dielectric material over a bond pad, forming an opening within the dielectric material to expose the bond pad, curing the dielectric material to form a surface of the dielectric material having a steep curvilinear profile, and forming a nickel material over the at least one bond pad. The dielectric material having a steep curvilinear profile may be formed by altering at least one of a curing process of the dielectric material and a thickness of the dielectric material. The dielectric material may be used to form a relatively thick Ni material on bond pads smaller than about 50 mum. Semiconductor structures formed by such methods are also disclosed. |
申请公布号 |
US8569167(B2) |
申请公布日期 |
2013.10.29 |
申请号 |
US201113074852 |
申请日期 |
2011.03.29 |
申请人 |
GHANDI JASPREET S.;YATES DON L.;SUN YANGYANG;MICRON TECHNOLOGY, INC. |
发明人 |
GHANDI JASPREET S.;YATES DON L.;SUN YANGYANG |
分类号 |
H01L21/4763 |
主分类号 |
H01L21/4763 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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