发明名称 |
Semiconductor power device with embedded diodes and resistors using reduced mask processes |
摘要 |
A trench semiconductor power device integrated with a Gate-Source and a Gate-Drain clamp diodes without using source mask is disclosed, wherein a plurality source regions of a first conductivity type of the trench semiconductor device and multiple doped regions of the first conductivity type of the clamp diodes are formed simultaneously through contact open areas defined by a contact mask.
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申请公布号 |
US8569780(B2) |
申请公布日期 |
2013.10.29 |
申请号 |
US201113246357 |
申请日期 |
2011.09.27 |
申请人 |
HSIEH FU-YUAN;FORCE MOS TECHNOLOGY CO., LTD. |
发明人 |
HSIEH FU-YUAN |
分类号 |
H01L33/00 |
主分类号 |
H01L33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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