发明名称 Method for fabricating a microelectromechanical sensor with a piezoresistive type readout
摘要 A method for fabricating a sensor is disclosed that in one embodiment bonds an etched semiconductor substrate wafer to an etched device wafer comprising a double silicon on insulator wafer to create a suspended structure, the flexure of which is sensed by an embedded piezoresistive sensor element. In one embodiment the sensor measures acceleration. In other embodiments the sensor measures pressure.
申请公布号 US8569092(B2) 申请公布日期 2013.10.29
申请号 US20090647660 申请日期 2009.12.28
申请人 MANTRAVADI NARESH VENKATA;GAMAGE SISIRA KANKANAM;GENERAL ELECTRIC COMPANY 发明人 MANTRAVADI NARESH VENKATA;GAMAGE SISIRA KANKANAM
分类号 H01L21/00 主分类号 H01L21/00
代理机构 代理人
主权项
地址
您可能感兴趣的专利