发明名称 High memory density, high input/output bandwidth logic-memory structure and architecture
摘要 A chip stack structure includes a logic chip having an active device surface, and memory slices of a memory unit vertically aligned such that a surface of the memory slices is oriented perpendicular to the active device surface of the logic chip. The chip stack structure also includes wiring patterned on an upper surface of the memory slices, the wiring electrically connecting memory leads of the memory slices to logic grids corresponding to logic grid connections of the logic chip.
申请公布号 US8569874(B2) 申请公布日期 2013.10.29
申请号 US201113043749 申请日期 2011.03.09
申请人 COLGAN EVAN G.;DENNEAU MONTY M.;PURUSHOTHAMAN SAMPATH;KELLY KLMBERLEY A.;YU ROY R.;INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 COLGAN EVAN G.;DENNEAU MONTY M.;PURUSHOTHAMAN SAMPATH;KELLY KLMBERLEY A.;YU ROY R.
分类号 H01L23/66;H01L23/64 主分类号 H01L23/66
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