发明名称 |
Bipolar transistor integrated with metal gate CMOS devices |
摘要 |
A high-k gate dielectric layer and a metal gate layer are formed and patterned to expose semiconductor surfaces in a bipolar junction transistor region, while covering a CMOS region. A disposable material portion is formed on a portion of the exposed semiconductor surfaces in the bipolar junction transistor area. A semiconductor layer and a dielectric layer are deposited and patterned to form gate stacks including a semiconductor portion and a dielectric gate cap in the CMOS region and a cavity containing mesa over the disposable material portion in the bipolar junction transistor region. The disposable material portion is selectively removed and a base layer including an epitaxial portion and a polycrystalline portion fills the cavity formed by removal of the disposable material portion. The emitter formed by selective epitaxy fills the cavity in the mesa.
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申请公布号 |
US8569840(B2) |
申请公布日期 |
2013.10.29 |
申请号 |
US201213370523 |
申请日期 |
2012.02.10 |
申请人 |
WALLNER THOMAS A.;ESHUN EBENEZER E.;JAEGER DANIEL J.;NGUYEN PHUNG T.;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
WALLNER THOMAS A.;ESHUN EBENEZER E.;JAEGER DANIEL J.;NGUYEN PHUNG T. |
分类号 |
H01L29/70;H01L29/73;H01L29/78 |
主分类号 |
H01L29/70 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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