发明名称 |
Semiconductor device and method for fabricating the same |
摘要 |
A method for fabricating a semiconductor device is described. A substrate having thereon a polysilicon resistor is provided. A dielectric layer is formed over the substrate covering the polysilicon resistor. The dielectric layer is etched to form a contact opening over the polysilicon resistor, with overetching into the polysilicon resistor. A metal silicide layer is formed on the polysilicon resistor in the contact opening. A metal material is filled in the contact opening. A portion of the dielectric layer, the metal material, and a portion of the polysilicon resistor are removed to expose the metal silicide layer. A metal contact is formed over the metal silicide layer.
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申请公布号 |
US8569127(B2) |
申请公布日期 |
2013.10.29 |
申请号 |
US201213418835 |
申请日期 |
2012.03.13 |
申请人 |
CHEN CHIEN-YANG;TSAI CHEN-HUA;HONG SHIH-FANG;TSAO PO-CHAO;WEI MING-TE;UNITED MICROELECTRONICS CORP. |
发明人 |
CHEN CHIEN-YANG;TSAI CHEN-HUA;HONG SHIH-FANG;TSAO PO-CHAO;WEI MING-TE |
分类号 |
H01L21/8238;H01L21/00 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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