发明名称 |
Replacement gate electrode with planar work function material layers |
摘要 |
In a replacement gate scheme, a continuous material layer is deposited on a bottom surface and a sidewall surface in a gate cavity. A vertical portion of the continuous material layer is removed to form a gate component of which a vertical portion does not extend to a top of the gate cavity. The gate component can be employed as a gate dielectric or a work function material portion to form a gate structure that enhances performance of a replacement gate field effect transistor.
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申请公布号 |
US8569135(B2) |
申请公布日期 |
2013.10.29 |
申请号 |
US201113186597 |
申请日期 |
2011.07.20 |
申请人 |
GUO DECHAO;HAN SHU-JEN;WONG KEITH KWONG HON;YUAN JUN;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
GUO DECHAO;HAN SHU-JEN;WONG KEITH KWONG HON;YUAN JUN |
分类号 |
H01L21/8234 |
主分类号 |
H01L21/8234 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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