发明名称 |
Method of manufacturing strained source/drain structures |
摘要 |
An integrated circuit device and method for manufacturing the integrated circuit device is disclosed. The disclosed method provides improved control over a surface proximity and tip depth of an integrated circuit device. In an embodiment, the method achieves improved control by forming a doped region and a lightly doped source and drain (LDD) region in a source and drain region of the device. The doped region is implanted with a dopant type opposite to the LDD region.
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申请公布号 |
US8569139(B2) |
申请公布日期 |
2013.10.29 |
申请号 |
US20100913041 |
申请日期 |
2010.10.27 |
申请人 |
NIEH CHUN-FENG;TSAI MING-HUAN;FAN WEI-HAN;HUANG YIMIN;CHENG CHUN-FAI;TSAI HAN-TING;WU CHII-MING;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
NIEH CHUN-FENG;TSAI MING-HUAN;FAN WEI-HAN;HUANG YIMIN;CHENG CHUN-FAI;TSAI HAN-TING;WU CHII-MING |
分类号 |
H01L21/336;H01L21/461 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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