| 摘要 |
The present disclosure relates to a semiconductor light emitting device constituted by a plurality of semiconductor layers including a first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity different from the first conductivity, and an active layer disposed between the first semiconductor and second semiconductor layer to generate light through recombination of electrons and holes. The semiconductor light emitting device includes: a plurality of semiconductor layers on which a first semiconductor layer, an active layer, and a second semiconductor layer are successively grown and stacked through a growth substrate; a first electrode electrically connected to the first semiconductor layer; a substrate coupled to the plurality of semiconductor layers on a side opposite to the first semiconductor layer; a boundary disposed between the plurality of semiconductor layers and the substrate and having a first interface through which current flows into the second semiconductor layer and a second interface by which a current flow into the second semiconductor layer is blocked relative to a current flow into the second semiconductor layer through the first interface; and a second electrode extended into the substrate toward the boundary. |
