发明名称 Organic field effect transistor
摘要 An organic field effect transistor including an organic semiconductor layer constituting a current path between a source electrode and a drain electrode wherein the organic semiconductor layer is made of a conjugated polymer having a depletion layer and a conductivity of the organic semiconductor layer is controlled by using a gate electrode, wherein the depletion layer is formed by joining a reductive material being capable of forming Schottky contact with the organic semiconductor layer made of the conjugated polymer. There can be provided an organic field effect transistor using a conjugated polymer as an organic semiconductor and being capable of maintaining an insulation property.
申请公布号 US8569746(B2) 申请公布日期 2013.10.29
申请号 US200913001585 申请日期 2009.06.04
申请人 NAGAMATSU SHUICHI;TAKASHIMA WATARU;KANETO KEIICHI;KYUSHU INSTITUTE OF TECHNOLOGY 发明人 NAGAMATSU SHUICHI;TAKASHIMA WATARU;KANETO KEIICHI
分类号 H01L29/08 主分类号 H01L29/08
代理机构 代理人
主权项
地址