发明名称 |
Organic field effect transistor |
摘要 |
An organic field effect transistor including an organic semiconductor layer constituting a current path between a source electrode and a drain electrode wherein the organic semiconductor layer is made of a conjugated polymer having a depletion layer and a conductivity of the organic semiconductor layer is controlled by using a gate electrode, wherein the depletion layer is formed by joining a reductive material being capable of forming Schottky contact with the organic semiconductor layer made of the conjugated polymer. There can be provided an organic field effect transistor using a conjugated polymer as an organic semiconductor and being capable of maintaining an insulation property.
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申请公布号 |
US8569746(B2) |
申请公布日期 |
2013.10.29 |
申请号 |
US200913001585 |
申请日期 |
2009.06.04 |
申请人 |
NAGAMATSU SHUICHI;TAKASHIMA WATARU;KANETO KEIICHI;KYUSHU INSTITUTE OF TECHNOLOGY |
发明人 |
NAGAMATSU SHUICHI;TAKASHIMA WATARU;KANETO KEIICHI |
分类号 |
H01L29/08 |
主分类号 |
H01L29/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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