发明名称 |
APPARATUS FOR MEASURING CHARACTERISTICS OF POWER SEMICONDUCTOR |
摘要 |
<p>PURPOSE: A power semiconductor characteristic measuring device is to minimize the volume of the device and to reduce the manufacturing costs. CONSTITUTION: A power semiconductor characteristic measuring device comprises an output transistor (200), a voltage source (300), a first switch (400), a second switch (500) and a pulse generator (600). The output transistor comprises identically with a measurement element (100). The voltage source provides voltage for the gate of the output transistor. The first switch controls power supply to the gate of the output transistor based on driving voltage applied to the measurement element. The second switch measures output current as the gate voltage is changed before measuring the measurement element and corrects the gate voltage of the measurement element. The pulse generator controls currents applied to the measurement element.</p> |
申请公布号 |
KR101323314(B1) |
申请公布日期 |
2013.10.29 |
申请号 |
KR20120091574 |
申请日期 |
2012.08.22 |
申请人 |
KOREA ELECTROTECHNOLOGY RESEARCH INSTITUTE |
发明人 |
KANG, IN HO;KIM, KI HYUN;BAHNG, WOOK |
分类号 |
G01R31/28 |
主分类号 |
G01R31/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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