| 摘要 |
PURPOSE: A bismuth doped magnesium silicide composition for thermoelectric materials and a preparing method of the same are provided to improve electric conductivity by controlling the scattering degree and the conductivity of carriers at a grain boundary phase. CONSTITUTION: A preparing method of a bismuth doped magnesium silicide composition for thermoelectric materials includes the following steps: magnesium, silicon, and bismuth are weighed and mixed to prepare a mixture for preparing Mg2Si containing bismuth; and the mixture is thermally treated and synthesized under a vacuum condition. The content of bismuth to be added is 0.01 to 4 atomic% based on 100 atomic % of the total content of magnesium, silicon, and bismuth. |
