发明名称 Apparatus for processing a substrate using plasma
摘要 PURPOSE: An apparatus for processing a substrate using plasma without replacing an entire gate apparatus is provided to replace only a protection element which is corroded with plasma and process gas by including the protection element on an opened surface of a gate housing exposed to the plasma and the process gas. CONSTITUTION: A processing chamber(10) processes a substrate using plasma. The processing chamber includes gates(13,23) to carry-in and out the substrate. A gate apparatus(100) is included in one side of the processing chamber and opens and closes the gate. The gate apparatus includes a gate housing(130) forming a predetermined space inside. The gate apparatus includes a lift unit(120) which drives a press unit(110) to the top and bottom.
申请公布号 KR101322729(B1) 申请公布日期 2013.10.29
申请号 KR20110008290 申请日期 2011.01.27
申请人 发明人
分类号 H01L21/68 主分类号 H01L21/68
代理机构 代理人
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