发明名称 |
Procedimiento para la fabricación de un elemento de construcción semiconductor con una zona superficial dopada selectivamente empleando difusión por fuera y correspondiente elemento de construcción semiconductor |
摘要 |
The invention proposes a method for producing a semiconductor component, such as a thin-layer solar cell. The method involves providing a doped semiconductor carrier substrate (1), producing a separating layer (2), for example a porous layer, on one surface of the semiconductor carrier substrate, depositing a doped semiconductor layer (3) over the separating layer and detaching the deposited semiconductor layer from the semiconductor carrier substrate. In line with the invention, process parameters such as the process temperature and time are chosen during the manufacturing process such that dopants can diffuse from the separation layer into the deposited semiconductor layer in order to form a specifically doped surface area (4). Specific use of solid-state diffusion makes it possible to simplify the manufacturing process over conventional fabrication methods in this manner.
|
申请公布号 |
ES2427156(T3) |
申请公布日期 |
2013.10.29 |
申请号 |
ES20070723432T |
申请日期 |
2007.03.20 |
申请人 |
INSTITUT FUER SOLARENERGIEFORSCHUNG GMBH |
发明人 |
BRENDEL, ROLF;TERHEIDEN, BARBARA;WOLF, ANDREAS |
分类号 |
H01L31/18;H01L21/00 |
主分类号 |
H01L31/18 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|