| 摘要 |
A method of fabricating a three-dimensional semiconductor device includes forming a stacked structure, and the stacked structure includes a first layer, a second layer, a third layer, and a fourth layer sequentially stacked on a substrate. The method also includes forming a sacrificial spacer on a sidewall of the stacked structure such that the sacrificial spacer exposes a sidewall of the third layer, and recessing the exposed sidewall of the third layer thereby forming a recess region between the second and fourth layers.
|
