发明名称 Conductive bump structure on substrate and fabrication method thereof
摘要 A conductive bump structure is formed on a substrate having a plurality of bonding pads and a first insulating layer thereon. The first insulating layer has a plurality of openings formed therein for exposing the bonding pads and a conductive post is formed on the bonding pads exposed through the openings. Therein, a gap is formed between the conductive post and the wall of the opening such that no contact occurs between the conductive post and the first insulating layer, thereby preventing delamination of the conductive bump structure caused by stresses concentrating on an interface of different materials as in the prior art.
申请公布号 US8569162(B2) 申请公布日期 2013.10.29
申请号 US201213644006 申请日期 2012.10.03
申请人 SILICONWARE PRECISION INDUSTRIES CO., LTD. 发明人 CHIEN FENG-LUNG;LIN YI-HUNG;CHEN YI-HSIN
分类号 H01L21/44 主分类号 H01L21/44
代理机构 代理人
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