| 发明名称 |
Protection layer for preventing UBM layer from chemical attack and oxidation |
| 摘要 |
A protection layer formed of a CuGeyNz layer, a CuSixNz layer, a CuSixGeyNz layer or combinations thereof is formed on an under-bump metallurgy (UBM) layer for preventing the UBM layer from chemical attack and oxidation during subsequent processes.
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| 申请公布号 |
US8569897(B2) |
申请公布日期 |
2013.10.29 |
| 申请号 |
US20100786818 |
申请日期 |
2010.05.25 |
| 申请人 |
LIU CHUNG-SHI;HWANG CHIEN LING;HO MING-CHE;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
LIU CHUNG-SHI;HWANG CHIEN LING;HO MING-CHE |
| 分类号 |
H01L23/48;H01L23/52;H01L29/40 |
主分类号 |
H01L23/48 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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