发明名称 Piezo-acoustic thin film resonator having a crystalline zinc oxide layer
摘要 A capacitor structure includes a lower electrode layer disposed on a substrate, an upper electrode layer and a crystalline zinc oxide-containing dielectric layer interposed between the electrode layers. The amorphous dielectric intermediate layer is interposed between the lower electrode layer and the crystalline zinc oxide-containing dielectric layer. A method for producing the aforementioned capacitor structure is also disclosed. The amorphous dielectric layer is adapted to produce during deposition of the zinc oxide an electrical field which is tipped in relation to the normal to the surface of the substrate surface or the lower electrode layer. The zinc oxide monocrystals grow at an angle, thereby providing a crystalline dielectric layer that can be induced to shear vibrations.
申请公布号 US8569864(B2) 申请公布日期 2013.10.29
申请号 US20050663831 申请日期 2005.08.02
申请人 GABL REINHARD;LINK MATHIAS;SIEMENS AKTIENGESELLSCHAFT 发明人 GABL REINHARD;LINK MATHIAS
分类号 H01L29/04;H03H9/00 主分类号 H01L29/04
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